Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method

被引：75

作者：

Ono, N ^{[1
]}

Kitamura, K ^{[1
]}

Nakajima, K ^{[1
]}

Shimanuki, Y ^{[1
]}

机构：

[1] Mitsubishi Mat Corp, Silicon Res Ctr, Omiya, Saitama 3300835, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 2A期

关键词：

silicon single crystal; Young's modulus; flexural vibration method; boron concentration;

D O I：

10.1143/JJAP.39.368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000 degrees C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's mudulus in the temperature range from 800 degrees C to 1000 degrees C did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5 x 10(18) atoms/cm(3).

引用

页码：368 / 371

页数：4

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