Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

被引：48

作者：

Tsybeskov, L

Duttagupta, SP

Hirschman, KD

Fauchet, PM

Moore, KL

Hall, DG

机构：

[1] UNIV ROCHESTER,INST OPT,ROCHESTER,NY 14627

[2] ROCHESTER INST TECHNOL,DEPT MICROELECT ENGN,ROCHESTER,NY 14623

[3] UNIV ROCHESTER,DEPT PHYS & ASTRON,ROCHESTER,NY 14627

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 14期

关键词：

D O I：

10.1063/1.118693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Porous silicon was doped by Er ions using electroplating and was converted to silicon-rich silicon oxide (SRSO) by partial thermal oxidation at 900 degrees C. The room-temperature photoluminescence (PL) at similar to 1.5 mu m is intense and narrow (less than or equal to 15 meV) and decreases by less than 50% from 12 to 300 K. The PL spectrum reveals no luminescence bands related to Si-bandedge recombination, point defects, or dislocations and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of Er-doped SRSO (SRSO:Er) was manufactured and room temperature electrluminescence at similar to 1.5 mu m was demonstrated. (C) 1997 American Institute of Physics.

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页码：1790 / 1792

页数：3

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