Scanning tunneling spectroscopy of dangling-bond wires fabricated on the Si(100)-2x1-H surface

被引：38

作者：

Hitosugi, T ^{[1
]}

Hashizume, T ^{[1
]}

Heike, S ^{[1
]}

Watanabe, S ^{[1
]}

Wada, Y ^{[1
]}

Hasegawa, T ^{[1
]}

Kitazawa, K ^{[1
]}

机构：

[1] HITACHI LTD,ADV RES LAB,HATOYAMA,SAITAMA 35003,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 3B期

关键词：

STM; STS; silicon; surface; manipulation; dangling bond; atomic wire;

D O I：

10.1143/JJAP.36.L361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)-2x1-H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.

引用

页码：L361 / L364

页数：4

共 17 条

[1] SI (100) SURFACE .3. SURFACE RECONSTRUCTION
APPELBAUM, JA
BARAFF, GA
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 588 - 601
[2] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY
BINNING, G
ROHRER, H
GERBER, C
WEIBEL, E
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (01) : 57 - 61
[3] STRUCTURE OF THE H-SATURATED SI(100) SURFACE
BOLAND, JJ
[J]. PHYSICAL REVIEW LETTERS, 1990, 65 (26) : 3325 - 3328
[4] SCANNING-TUNNELING-MICROSCOPY OF THE INTERACTION OF HYDROGEN WITH SILICON SURFACES
BOLAND, JJ
[J]. ADVANCES IN PHYSICS, 1993, 42 (02) : 129 - 171
[5] POSITIONING SINGLE ATOMS WITH A SCANNING TUNNELING MICROSCOPE
EIGLER, DM
SCHWEIZER, EK
[J]. NATURE, 1990, 344 (6266) : 524 - 526
[6] There's plenty of room at the bottom
Feynman, Richard P.
[J]. Journal of Microelectromechanical Systems, 1992, 1 (01) : 60 - 66
[7] Hashizume T, 1996, JPN J APPL PHYS 2, V35, pL1085
[8] FIELD ION-SCANNING TUNNELING MICROSCOPY OF ALKALI-METAL ADSORPTION ON THE SI(100) SURFACE
HASHIZUME, T
HASEGAWA, Y
KAMIYA, I
IDE, T
SUMITA, I
HYODO, S
SAKURAI, T
TOCHIHARA, H
KUBOTA, M
MURATA, Y
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 233 - 237
[9] SURFACE MODIFICATION OF MOS2 USING AN STM
HOSOKI, S
HOSAKA, S
HASEGAWA, T
[J]. APPLIED SURFACE SCIENCE, 1992, 60-1 : 643 - 647
[10] NANOSCALE PATTERNING AND OXIDATION OF H-PASSIVATED SI(100)-2X1 SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE
LYDING, JW
SHEN, TC
HUBACEK, JS
TUCKER, JR
ABELN, GC
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (15) : 2010 - 2012

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