Metal-ZnO heterostructure nanorods with an abrupt interface

被引:18
作者
Park, WI
Jung, SW
Yi, GC
Oh, SH
Park, CG
Kim, M
机构
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
[2] Samsung Adv Inst Sci & Technol, Suwon 440600, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 11A期
关键词
ZnO; nanorods; metal-semiconductor heterostructure; metalorganic vapor phase epitaxy (MOVPE); non-catalytic growth;
D O I
10.1143/JJAP.41.L1206
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on metal-semiconductor heterostructure nanorods with an abrupt interface. The metal-semiconductor nanorods were fabricated simply by evaporating metal on vertically aligned ZnO nanorods. Before the fabrication of heterostructure nanorods, the ZnO nanorods were prepared by metalorganic vapor phase epitaxy. Since no metal catalyst is employed during the nanorod growth, the nanorods do not exhibit any metal clusters on their tips. When metal is evaporated on the vertically aligned nanorods, metal is deposited mainly on the tips of the nanorods. Transmission electron microscopy revealed that the Au-coated ZnO heterostructure nanorods exhibit an atomically sharp interface between ZnO and Au.
引用
收藏
页码:L1206 / L1208
页数:3
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