Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

被引：100

作者：

Jeong, Hu Young ^{[1
]}

Lee, Jeong Yong ^{[1
]}

Choi, Sung-Yool ^{[2
]}

Kim, Jeong Won ^{[3
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] ETRI, Taejon 305700, South Korea

[3] KRISS, Taejon 305340, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 16期

关键词：

HIGH-DENSITY;

D O I：

10.1063/1.3251784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical transmission electron microscopy technique using energy-filtering transmission electron microscopy, and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at the top interface by an oxidation-reduction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3251784]

引用

页数：3

共 17 条

[1] SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].

ARGALL, F .

SOLID-STATE ELECTRONICS, 1968, 11 (05) :535-&

[2]

Argall F, 1966, ELECTRON LETT, V2, P282, DOI 10.1049/el:19660238

[3]

Baek IG, 2005, INT EL DEVICES MEET, P769

[4] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].

Baek, IG ;

Lee, MS ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Park, JC ;

Park, SO ;

Kim, HS ;

Yoo, IK ;

Chung, UI ;

Moon, JT .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590

[5] ELECTRONIC CONDUCTION IN THERMALLY GROWN SILICON DIOXIDE FILMS [J].

BRANDER, RW ;

LAMB, DR ;

RUNDLE, PC .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (01) :23-&

[6] ELECTRONIC AND CHEMICAL INTERACTIONS AT ALUMINUM TIO2(110) INTERFACES [J].

DAKE, LS ;

LAD, RJ .

SURFACE SCIENCE, 1993, 289 (03) :297-306

[7] The surface science of titanium dioxide [J].

Diebold, U .

SURFACE SCIENCE REPORTS, 2003, 48 (5-8) :53-229

[8] SWITCHING PROPERTIES OF THIN NIO FILMS [J].

GIBBONS, JF ;

BEADLE, WE .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :785-&

[9] BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES [J].

HIATT, WR ;

HICKMOTT, TW .

APPLIED PHYSICS LETTERS, 1965, 6 (06) :106-&

[10] Two series oxide resistors applicable to high speed and high density nonvolatile memory [J].

Lee, Myoung-Jae ;

Park, Youngsoo ;

Suh, Dong-Seok ;

Lee, Eun-Hong ;

Seo, Sunae ;

Kim, Dong-Chirl ;

Jung, Ranju ;

Kang, Bo-Soo ;

Ahn, Seung-Eon ;

Lee, Chang Bum ;

Seo, David H. ;

Cha, Young-Kwan ;

Yoo, In-Kyeong ;

Kim, Jin-Soo ;

Park, Bae Ho .

ADVANCED MATERIALS, 2007, 19 (22) :3919-+

← 1 2 →