Surface-acoustic-wave-driven luminescence from a lateral p-n junction

被引：25

作者：

Gell, J. R.

Atkinson, P.

Bremner, S. P.

Sfigakis, F.

Kataoka, M.

Anderson, D.

Jones, G. A. C.

Barnes, C. H. W.

Ritchie, D. A.

Ward, M. B.

Norman, C. E.

Shields, A. J.

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0WE, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 24期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2405419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography. (c) 2006 American Institute of Physics.

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页数：3

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