Lateral n-i-p junctions formed in an InSb quantum well by bevel etching

被引：12

作者：

Nash, GR ^{[1
]}

Nash, KJ

Smith, SJ

Bartlett, CJ

Jefferson, JH

Buckle, L

Emeny, MT

Buckle, PD

Ashley, T

机构：

[1] QinetiQ, Malvern Technol Ctr, Malvern WR14 3PS, Worcs, England

[2] Univ Bristol, Dept Elect & Elect Engn, Photon Grp, Bristol BS8 1UB, Avon, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 02期

关键词：

D O I：

10.1088/0268-1242/20/2/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used a novel, simple technique based on bevel etching, to fabricate samples containing lateral n-i-p junctions in an InSb/InAlSb quantum well. The structure was designed by self-consistent solution of Schrodinger's and Poisson's equations, and grown by molecular beam epitaxy on a SI GaAs substrate. Current/voltage characteristics were measured as a function of temperature between 10 and 80 K, and rectifying characteristics were obtained over the whole temperature range.

引用

页码：144 / 148

页数：5

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