Lateral p-n junction in modulation doped AlGaAs/GaAs

被引：23

作者：

Kaestner, B

Hasko, DG

Williams, DA

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

[2] Univ Cambridge, Cavendish Lab, Hitachi Cambridge Lab, Cambridge CB3 0HE, England

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 4B期

关键词：

lateral p-n junction; GaAs; light emitting device; electroluminescence; optoelectronic integration;

D O I：

10.1143/JJAP.41.2513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lateral p-n junctions have advantages for monolithic integration with other electronic devices and can improve the modulation bandwidth of light emitting devices. An alternative approach to existing fabrication methods is presented. Simulations show that recombination takes place inside the undoped channel and that the lateral position of the junction can be defined via etching. In order to demonstrate the concept, a simple device was fabricated and characterized.

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页码：2513 / 2515

页数：3

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