Lateral-junction vertical-cavity surface-emitting laser grown by molecular-beam epitaxy on a GaAs (311) A-oriented substrate

被引：23

作者：

Vaccaro, PO ^{[1
]}

Ohnishi, H ^{[1
]}

Fujita, K ^{[1
]}

机构：

[1] ATR, Adapt Commun Res Labs, Kyoto 6190288, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 25期

关键词：

D O I：

10.1063/1.124202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A vertical-cavity surface-emitting laser was fabricated using a lateral p-n junction to inject carriers in the InGaAs active layer. The lateral p-n junction is formed in GaAs epilayers doped only with silicon and grown by molecular-beam epitaxy on a patterned GaAs (311) A-oriented substrate. This design allows the use of electrically insulating distributed Bragg reflectors and coplanar contacts while simplifying device process. Pulsed-mode operation at room temperature was obtained with a threshold current of 2.3 mA. Light emission spectrum has a single peak at 942 nm with a full width at half maximum of 0.15 nm. (C) 1999 American Institute of Physics. [S0003-6951(99)04625-2].

引用

页码：3854 / 3856

页数：3

共 7 条

[1] LATERAL P-N-JUNCTION FORMATION IN GAAS MOLECULAR-BEAM EPITAXY BY CRYSTAL PLANE DEPENDENT DOPING [J].

MILLER, DL .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1309-1311

[2] CAPTURE OF PHOTOEXCITED CARRIERS IN A SINGLE QUANTUM-WELL WITH DIFFERENT CONFINEMENT STRUCTURES [J].

MORIN, S ;

DEVEAUD, B ;

CLEROT, F ;

FUJIWARA, K ;

MITSUNAGA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1669-1675

[3]

NORMAN CE, 1997, I PHYS C SER, V157, P647

[4] Lateral tunneling devices on GaAs (111)A and (311)A patterned substrates grown by MBE using only silicon dopant [J].

Ohnishi, H ;

Hirai, M ;

Fujita, K ;

Watanabe, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1168-1171

[5] WELL-BARRIER HOLE BURNING IN QUANTUM-WELL LASERS [J].

RIDEOUT, W ;

SHARFIN, WF ;

KOTELES, ES ;

VASSELL, MO ;

ELMAN, B .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (09) :784-786

[6] A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates [J].

Vaccaro, PO ;

Ohnishi, H ;

Fujita, K .

APPLIED PHYSICS LETTERS, 1998, 72 (07) :818-820

[7] CRYSTAL ORIENTATION DEPENDENCE OF SILICON DOPING IN MOLECULAR-BEAM EPITAXIAL ALGAAS/GAAS HETEROSTRUCTURES [J].

WANG, WI ;

MENDEZ, EE ;

KUAN, TS ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :826-828

← 1 →