Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope

被引：10

作者：

Saito, N

Sato, F

Takizawa, K

Kusano, J

Okumura, H

Aida, T

Saiki, T

Ohtsu, M

机构：

[1] KANAGAWA ACAD SCI & TECHNOL, TAKATSU KU, KAWASAKI, KANAGAWA 213, JAPAN

[2] TOKYO INST TECHNOL, MIDORI KU, YOKOHAMA, KANAGAWA 226, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 7B期

关键词：

lateral p-n junction; GaAs (111)A; MBE; patterned substrate; near-field scanning optical microscope;

D O I：

10.1143/JJAP.36.L896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lateral p-n junctions on GaAs (111)A patterned substrates are characterized through the spatially resolved detection of light emission by current injection using a collection-mode near-field scanning optical microscope. The junctions are one-step grown at the upper and the lower end of the slope, taking advantage of the amphoteric nature of Si in GaAs. Although the width of the transition region determined from spatially resolved photoluminescence measurements is much wider in the lower junction than in the upper one, the broadness of the junction, which is observed for the first time owing to the high resolution of the detection system, is the same for both junctions.

引用

收藏

页码：L896 / L898

页数：3

相关论文

共 15 条

[1] CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE [J].

BALLINGALL, JM ;

WOOD, CEC .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :947-949

[2] COMBINED SHEAR FORCE AND NEAR-FIELD SCANNING OPTICAL MICROSCOPY [J].

BETZIG, E ;

FINN, PL ;

WEINER, JS .

APPLIED PHYSICS LETTERS, 1992, 60 (20) :2484-2486

[3] LATERAL P-N-JUNCTIONS ON GAAS(111)A SUBSTRATES PATTERNED WITH EQUILATERAL TRIANGLES [J].

FUJII, M ;

YAMAMOTO, T ;

SHIGETA, M ;

TAKEBE, T ;

KOBAYASHI, K ;

HIYAMIZU, S ;

FUJIMOTO, I .

SURFACE SCIENCE, 1992, 267 (1-3) :26-28

[4] Micro-Raman characterization of the electronic properties of Si-doped GaAs layers grown on patterned substrates [J].

Gerster, J ;

Schneider, JM ;

Ehret, C ;

Limmer, W ;

Sauer, R ;

Heinecke, H .

APPLIED PHYSICS LETTERS, 1997, 70 (01) :69-71

[5] ELECTROLUMINESCENCE FROM LATERAL P-N-JUNCTIONS GROWN ON (111)A GAAS PATTERNED SUBSTRATES [J].

INAI, M ;

YAMAMOTO, T ;

TAKEBE, T ;

WATANABE, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12A) :L1718-L1721

[6] HIGH-POWER FUNDAMENTAL MODE ALGAAS QUANTUM WELL CHANNELED SUBSTRATE LASER GROWN BY MOLECULAR-BEAM EPITAXY [J].

JAECKEL, H ;

MEIER, HP ;

BONA, GL ;

WALTER, W ;

WEBB, DJ ;

VANGIESON, E .

APPLIED PHYSICS LETTERS, 1989, 55 (11) :1059-1061

[7] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF SILICON-DOPED ALGAAS AND GAAS ON (311)A GAAS SUBSTRATES AND THEIR DEVICE APPLICATIONS [J].

LI, WQ ;

BHATTACHARYA, PK ;

KWOK, SH ;

MERLIN, R .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) :3129-3135

[8] LATERAL P-N-JUNCTION FORMATION IN GAAS MOLECULAR-BEAM EPITAXY BY CRYSTAL PLANE DEPENDENT DOPING [J].

MILLER, DL .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1309-1311

[9] TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION [J].

NAMIZAKI, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :427-431

[10] INCORPORATION BEHAVIOR OF SI ATOMS IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON MISORIENTED (111)A SUBSTRATES [J].

OKANO, Y ;

SHIGETA, M ;

SETO, H ;

KATAHAMA, H ;

NISHINE, S ;

FUJIMOTO, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08) :L1357-L1359