A PHYSICALLY BASED MOBILITY MODEL FOR NUMERICAL-SIMULATION OF NONPLANAR DEVICES

被引：617

作者：

LOMBARDI, C ^{[1
]}

MANZINI, S ^{[1
]}

SAPORITO, A ^{[1
]}

VANZI, M ^{[1
]}

机构：

[1] SGS THOMSON MICROELECTR,CENTR RES & DEV,PHYS & MAT CHARACTERIZAT GRP,MILANO,ITALY

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1988年 / 7卷 / 11期

关键词：

D O I：

10.1109/43.9186

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

收藏

页码：1164 / 1171

页数：8

相关论文

共 30 条

[1] BACCARANI G, 1985, 4 NAS DUBL
[2] RELATIVE IMPORTANCE OF PHONON SCATTERING TO CARRIER MOBILITY IN SI SURFACE-LAYER AT ROOM-TEMPERATURE
CHENG, YC
SULLIVAN, EA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) : 3619 - 3625
[3] COHEN RW, 1980, SOLID STATE ELECTRON, V23, P35
[4] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS AT THE SI-SIO2 INTERFACE AS DETERMINED BY A TIME-OF-FLIGHT TECHNIQUE
COOPER, JA
NELSON, DF
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1445 - 1456
[5] DAVANZO D, 1979, G2015 STANF U TECH R
[6] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
DEBYE, PP
CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[7] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON
DZIEWIOR, J
SILBER, D
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 170 - 172
[8] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS
FANG, FF
FOWLER, AB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +
[9] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES
FANG, FF
FOWLER, AB
[J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +
[10] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1