Alternatives to thick MBE-grown relaxed SiGe buffers

被引：19

作者：

Hackbarth, T

Herzog, HJ

Zeuner, M

Höck, G

Fitzgerald, BA

Bulsara, M

Rosenblad, C

von Kanel, H

机构：

[1] DaimlerChrysler AG, Res & Technol, D-89081 Ulm, Germany

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[3] AmberWave, Windham, NH 03087 USA

[4] ETH Zurich, Festkorperphys Lab, CH-8093 Zurich, Switzerland

来源：

THIN SOLID FILMS | 2000年 / 369卷 / 1-2期

关键词：

molecular beam epitaxy; ultra-high vacuum chemical vapor deposition; low-energy plasma-enhanced chemical vapor deposition; strain relieved buffer; modulation doped field effect transistor; mobility;

D O I：

10.1016/S0040-6090(00)00795-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated several growth concepts for strain relieved SiGe buffers as basis for high frequency transistors. Modulation doped quantum wells (MODQWs) were realized by molecular beam epitaxy (MBE) on top of thick graded buffers prepared by MBE, ultra-high vacuum chemical vapor deposition (UHVCVD) and low-energy plasma-enhanced CVD (LEPECVD). Additionally, thin buffers including a specific layer grown at low temperature (LT) were realized entirely by MBE. The overgrown thick CVD samples show comparable transport properties and thermal stabilities to those on thick graded MBE buffers. Mobilities of up to 90 000 cm(2)/V s have been measured at 30 K. Thin LT-MBE structures show slightly worse properties but are superior to conventional constant composition buffers. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：148 / 151

页数：4

共 6 条

[1] Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing [J].