Spin accumulation in forward-biased MnAs/GaAs Schottky diodes

被引：79

作者：

Stephens, J ^{[1
]}

Berezovsky, J

McGuire, JP

Sham, LJ

Gossard, AC

Awschalom, DD

机构：

[1] Univ Calif Santa Barbara, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA

[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.93.097602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We describe a new means for all-electrical generation of spin polarization in semiconductors. In contrast with spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe accumulation at the metal-semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal Kerr microscopy is used to image the electron spin and the resulting dynamic nuclear polarization that arises from the nonequilibrium carrier polarization.

引用

页码：097602 / 1

页数：4

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