Effects of UV light-irradiated buffer layer on the performance of polymer solar cells

被引：30

作者：

Lee, Hang Ken ^{[1
]}

Kim, Jai-Kyeong ^{[2
]}

Park, O. Ok ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Chem & Biomol Engn, Grad Program BK21, Taejon 305701, South Korea

[2] Korea Inst Sci & Technol, Ctr Energy Mat Res, Div Mat Sci & Technol, Seoul 136791, South Korea

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 08期

关键词：

Organic photovoltaic; Buffer layer modification; Series resistance; UV light irradiation; Bulk heterojunction;

D O I：

10.1016/j.orgel.2009.09.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the effect of a UV-irradiated poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) buffer layer on the performance of polymer photovoltaic cells based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blends. It was found that UV irradiation can reduce the bulk and contact resistance of PEDOT:PSS films, improving the power conversion efficiency from (3.05 +/- 0.04)% to (3.50 +/- 0.03)% due to the lower device series resistance under an illumination of AM 1.5G, 100 mW/cm(2). The work function change after UV irradiation and negligible surface morphology change was noticed. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1641 / 1644

页数：4

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