p-type doping of graphene with F4-TCNQ

被引：122

作者：

Pinto, H. ^{[1
]}

Jones, R. ^{[1
]}

Goss, J. P. ^{[2
]}

Briddon, P. R. ^{[2
]}

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] Univ Newcastle, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 40期

关键词：

D O I：

10.1088/0953-8984/21/40/402001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We use local density function theory to study the electronic properties of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) deposited on a graphene surface. We show that charge transfer of 0.3 holes/molecule between graphene and F4-TCNQ occurs, which makes graphene p-type doped. These results are in agreement with experimental findings on F4-TCNQ.

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页数：3

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