High-intensity oxygen cluster ion beam generation and its application to cluster ion-assisted deposition

被引：7

作者：

Matsuo, J ^{[1
]}

Minami, E ^{[1
]}

Saito, M ^{[1
]}

Toyoda, N ^{[1
]}

Katsumata, H ^{[1
]}

Yamada, I ^{[1
]}

机构：

[1] Kyoto Univ, Ion Beam Engn Expt Lab, Kyoto 6068501, Japan

来源：

EUROPEAN PHYSICAL JOURNAL D | 1999年 / 9卷 / 1-4期

关键词：

D O I：

10.1007/s100530050516

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Oxide film formation using high-intensity oxygen cluster ion beams has been developed. This deposition process uses large cluster ions, which can transport thousands of atoms per ion with very low energy per constituent atom. As a result, the interactions between the cluster and substrate atoms occur in the near-surface region, and cluster ions can deposit their energy with a high density in a very localized surface region. Enhancement of the oxidation reactions is clearly demonstrated. High-quality tin-doped indium-oxide (ITO) films, which are widely used in electrical and optical devices, are formed. Very smooth, highly transparent (> 80%) and low-resistivity (< 4 x 10(-4) Omega cm; which are the lowest values for films grown at room temperature) films, were obtained by the use of a 7 keV oxygen cluster ion beam. The energetic oxygen clusters collapsed at the surface and reacted with the metal atoms, and about 10% of them were incorporated when the kinetic energy of the cluster ion was above 5 keV. Oxidation reaction can be enhanced by energetic cluster ion bombardment, which offers a new technique for ion-assisted thin-film formation.

引用

页码：635 / 638

页数：4

共 20 条

[1] LOW-DAMAGE SURFACE PROCESSING BY GAS CLUSTER ION-BEAMS [J].

AKIZUKI, M ;

MATSUO, J ;

HARADA, M ;

OGASAWARA, S ;

DOI, A ;

YONEDA, K ;

YAMAGUCHI, T ;

TAKAOKA, GH ;

ASCHERON, CE ;

YAMADA, I .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 99 (1-4) :229-232

[2] Low-temperature oxidation of silicon by O-2 cluster ion beams [J].

Akizuki, M ;

Matsuo, J ;

Ogasawara, S ;

Harada, M ;

Doi, A ;

Yamada, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1450-1453

[3]

AKIZUKI M, 1995, MAT SCI ENG A-STRUCT, V217, P78

[4] Molecular dynamics simulation of damage formation by cluster ion impact [J].

Aoki, T ;

Matsuo, J ;

Insepov, Z ;

Yamada, I .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 121 (1-4) :49-52

[5] LARGER CLUSTER ION IMPACT PHENOMENA [J].

BEUHLER, R ;

FRIEDMAN, L .

CHEMICAL REVIEWS, 1986, 86 (03) :521-537

[6]

CHOPRA KL, 1983, THIN FILM DEVICES AP

[7] CLUSTER ION SOURCES [J].

HAGENA, OF .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (04) :2374-2379

[8]

HOWSON RP, 1996, NUCL INSTRUM METH B, V121, P96

[9] ULTRA-LOW-TEMPERATURE GROWTH OF HIGH-INTEGRITY GATE OXIDE-FILMS BY LOW-ENERGY ION-ASSISTED OXIDATION [J].

KAWAI, Y ;

KONISHI, N ;

WATANABE, J ;

OHMI, T .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2223-2225

[10] LOW-TEMPERATURE FABRICATION OF MOSFETS UTILIZING A MICROWAVE-EXCITED PLASMA OXIDATION TECHNIQUE [J].

KIMURA, SI ;

MURAKAMI, E ;

WARABISAKO, T ;

SUNAMI, H ;

TOKUYAMA, T .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :38-40

← 1 2 →