Influence of sample oxidation on the nature of optical luminescence from porous silicon

被引：25

作者：

Coulthard, I

Antel, WJ

Freeland, JW

Sham, TK

Naftel, SJ

Zhang, P

机构：

[1] Argonne Natl Lab, Expt Facilities Div, Argonne, IL 60439 USA

[2] Univ Western Ontario, Dept Chem, London, ON N6A 5B7, Canada

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.127023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Site-selective luminescence experiments were performed upon porous-silicon samples exposed to varying degrees of oxidation. The source of different luminescence bands was determined to be due to either quantum confinement in nanocrystalline silicon or defective silicon oxide. Of particular interest is the defective silicon-oxide luminescence band found at 2.1 eV, which was found to frequently overlap with a luminescence band from nanocrystalline silicon. Some of the historical confusion and debate with regards to the source of luminescence from porous silicon can be attributed to this overlap. (C) 2000 American Institute of Physics. [S0003-6951(00)01330-9].

引用

收藏

页码：498 / 500

页数：3

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