PHOTOLUMINESCENCE OF POROUS SILICON EXPOSED TO AMBIENT AIR

被引：87

作者：

MARUYAMA, T

OHTANI, S

机构：

[1] Department of Chemical Engineering, Faculty of Engineering, Kyoto University

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.112047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room-temperature photoluminescence and structure were studied concerning porous silicon which was exposed to ambient air. Water vapor in ambient air gradually oxidized the surface of the porous silicon with developing Si-O-Si bonds. This room-temperature oxidation progressively replaced an unstable H-passivated surface with a more stable O-passivated surface, dramatically increasing the intensity of the photoluminescence.

引用

页码：1346 / 1348

页数：3

共 4 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].