Hydrogen sensors made of undoped and Pt-doped SnO2 nanowires

被引：102

作者：

Shen, Yanbai ^{[1
]}

Yamazaki, Toshinari ^{[1
]}

Liu, Zhifu ^{[1
]}

Meng, Dan ^{[1
]}

Kikuta, Toshio ^{[1
]}

机构：

[1] Toyama Univ, Fac Engn, Toyama 9308555, Japan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 488卷 / 01期

关键词：

Tin oxide; Nanowires; Gas sensor; Hydrogen; Platinum; GAS-SENSING PROPERTIES; TIN OXIDE; IN2O3; NANOWIRES; TEMPERATURE; FILMS; SENSITIVITY; NANOBELTS; ADDITIVES; GROWTH; CO;

D O I：

10.1016/j.jallcom.2009.08.124

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Tin oxide (SnO2) nanowires with a tetragonal structure were formed on oxidized Si substrates by thermal evaporation of tin grains at 900 degrees C. The morphology, crystal structure, and H-2 gas sensing properties of undoped and Pt-doped SnO2 nanowires were investigated. SnO2 nanowires were approximately 30-200 nm in diameter and several tens of micrometers in length. Gas sensors made of undoped, 0.8 wt% Pt-doped, and 2 wt% Pt-doped SnO2 nanowires showed a reversible response to H-2 at an operating temperature of RT-300 degrees C. The sensitivity increased with increasing H-2 concentration. The highest sensitivity of 118 was obtained for 2 wt% Pt-doped SnO2 nanowire sensor to 1000 ppm H-2 at an operating temperature of 100 degrees C. The gas sensing properties of Pt-doped and Pd-doped SnO2 nanowires were also investigated to compare the effect of impurity doping. The results demonstrated that impurity doping improved the sensitivity and lowered the operating temperature at which the sensitivity was maximized (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：L21 / L25

页数：5

共 22 条

[1] Grain size effects on H-2 gas sensitivity of thick film resistor using SnO2 nanoparticles [J].