Be diffusion in InGaAs/InP heterojunction bipolar transistors

被引：20

作者：

Bahl, SR ^{[1
]}

Moll, N

Robbins, VM

Kuo, HC

Moser, BG

Stillman, GE

机构：

[1] Agilent Labs, Palo Alto, CA 94304 USA

[2] Agilent Technol, Semicond Prod Grp, San Jose, CA 95131 USA

[3] RF Micro Devices, Greensboro, NC 27409 USA

[4] Univ Illinois, Urbana, IL 61801 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 07期

关键词：

beryllium; carbon; diffusion process; heterojunction bipolar transistors; indium compounds; reliability testing;

D O I：

10.1109/55.847371

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Classic signatures of Be diffusion were observed in InAlAs/InGaAs HBT's after elevated temperature bias stress, i.e., a positive shift in the Gummel plot, higher collector ideality, and higher offset voltage. An activation energy of 1.57 eV was calculated. Lifetimes of 3.3 x 10(6) h and 37 000 h were extrapolated for low and high power operation, respectively. In contrast, an InP/InGaAs HBT with a C doped base showed no signatures of C diffusion. The results show that Be diffusion is manageable at lower power. They also support the idea that C is more stable than Be in this material system.

引用

页码：332 / 334

页数：3

共 16 条

[1] RESOLVING DEGRADATION MECHANISMS IN ULTRA-HIGH PERFORMANCE N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS [J].