Improved temperature performance of Al0.33Ga0.67As/GaAs quantum-cascade lasers with emission wavelength at λ≈11 μm

被引：54

作者：

Kruck, P ^{[1
]}

Page, H ^{[1
]}

Sirtori, C ^{[1
]}

Barbieri, S ^{[1
]}

Stellmacher, M ^{[1
]}

Nagle, J ^{[1
]}

机构：

[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 23期

关键词：

D O I：

10.1063/1.126686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The pulsed operation of a GaAs/AlGaAs quantum-cascade laser is reported up tc, 258 K. These devices emit at 11.3 mu m and are based on a plasmon-confinement waveguide. To optimize the material gain, the active region is designed to diminish electron escape to continuum states. Gain and threshold measurement show evidence of better carrier confinement and improved thermal behavior compared to lambda approximate to 9 mu m GaAs quantum-cascade lasers. The maximum peak-collected power at 77 K is 520 mW per facet and still 27 mW at 258 K. The temperature dependence of the threshold current density is characterized by a T-0 = 128 K. (C) 2000 American Institute of Physics. [S0003-6951(00)00623-9].

引用

页码：3340 / 3342

页数：3

共 12 条

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