Copper interface induced relaxation of TiO2(110)-1X1

被引:17
作者
Charlton, G [1 ]
Howes, PB
Muryn, CA
Raza, H
Jones, N
Taylor, JSG
Norris, C
McGrath, R
Norman, D
Turner, TS
Thornton, G
机构
[1] Univ Manchester, IRC Surface Sci, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Dept Chem, Manchester M13 9PL, Lancs, England
[3] Univ Wales Coll Cardiff, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales
[4] Univ Leicester, Dept Phys & Astron, Leicester LE1 7RH, Leics, England
[5] Univ Liverpool, IRC Surface Sci, Liverpool L69 3BX, Merseyside, England
[6] Univ Liverpool, Dept Phys, Liverpool L69 3BX, Merseyside, England
[7] SERC, Daresbury Lab, CCLRC, Warrington WA4 4AD, Cheshire, England
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 23期
关键词
D O I
10.1103/PhysRevB.61.16117
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Surface x-ray diffraction has been used to examine the effect of a Cu overlayer on the bulk structural relaxations of TiO2(110) 1 x 1). The Ti atoms at this buried interface are at close to their bulk-terminated positions, representing a derelaxation from the clean surface positions by up to about 0.2 Angstrom. In contrast, O atom vertical and lateral displacements are enhanced, with values of up to 0.4 +/- 0.1 Angstrom and 0.6 +/- 0.1 Angstrom, respectively. This enhanced relaxation is consistent with Cu-O bonding.
引用
收藏
页码:16117 / 16120
页数:4
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