Stark shift in electroluminescence of individual InAs quantum dots

被引：40

作者：

Itskevich, IE

Rybchenko, SI

Tartakovskii, II

Stoddart, ST

Levin, A

Main, PC

Eaves, L

Henini, M

Parnell, S

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

[3] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 26期

关键词：

D O I：

10.1063/1.126825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assembled quantum dots is embedded, with an active area of submicron size. In the electroluminescence spectra of these devices, we observed isolated narrow peaks due to emission from individual dots. From the shift of the peaks in an electric field (the quantum confined Stark effect), we show that the ground and excited states in the dots have different spatial alignments of the electron and hole. (C) 2000 American Institute of Physics. [S0003-6951(00)02526-2].

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页码：3932 / 3934

页数：3

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