GaN nanorods coated with pure BN

被引：58

作者：

Han, WQ

Zettl, A ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 26期

关键词：

D O I：

10.1063/1.1531836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a method to efficiently synthesize gallium nitride (GaN) nanorods coated with insulating boron nitride (BN) layers. The GaN core is crystalline (with either a cubic zincblende or hexagonal wurtzite structure) and has diameters ranging from 10 to 85 nm and lengths up to 60 mum. The outer encapsulating BN shells with typical thicknesses less than 5 nm extend fully over, and adhere well to, the entire nanorod surface. (C) 2002 American Institute of Physics.

引用

页码：5051 / 5053

页数：3

共 23 条

[11] Synthesis of boron nitride nanotubes from carbon nanotubes by a substitution reaction [J].