A high Q, large tuning range MEMS capacitor for RF filter systems

被引:48
作者
Borwick, RL [1 ]
Stupar, PA
DeNatale, J
Anderson, R
Tsai, C
Garrett, K
Erlandson, R
机构
[1] Rockwell Sci Co, Thousand Oaks, CA USA
[2] Rockwell Collins, Cedar Rapids, IA USA
关键词
RF MEMS; tunable capacitor; damping; liquid damping; tunable filters;
D O I
10.1016/S0924-4247(02)00316-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using a new, double-sided adhesive process, an analog tunable capacitor has been designed and fabricated for implementation into a two-pole UHF filter. New design components such as two-sided metal deposition, low resistivity silicon, thicker device layers, and double beam suspensions have improved RF performance drastically. Additional improvements are demonstrated by critically damping the device in a liquid. In the 200-400 MHz range that this device is intended for, Q values are in excess of 100. In addition, an 8.4 to 1 tuning ratio has been achieved with continuous tuning over a 1.4-11.9 pf range. When implemented into a two-pole UHF filter, tuning over a 225-400 MHz range was achieved with a loss under 6.2 dB. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:33 / 41
页数:9
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