Raman scattering study and AFM morphological characterization of MOVPE-grown (111)-strained heterostructures

被引：11

作者：

Gennari, S

Attolini, G

Pelosi, C

Lottici, PP

Ricco, F

Labardi, M

Allegrini, M

Frediani, C

机构：

[1] UNIV PARMA,INFM,DEPT PHYS,I-43100 PARMA,ITALY

[2] SCUOLA NORMALE SUPER PISA,DEPT PHYS,I-56100 PISA,ITALY

[3] UNIV PISA,DEPT PHYS,I-56100 PISA,ITALY

[4] CNR,INST BIOPHYS,I-56100 PISA,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 166卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(96)00082-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

(111)-oriented GaAs heterolayers have been deposited by metalorganic vapour phase epitaxy (MOVPE) at different III-V ratios and growth times on GaP and InP substrates of both A and B polarities. The strain release has been determined by Raman spectroscopy. The growth mechanisms are discussed on the basis of the images obtained by atomic force microscopy.

引用

页码：309 / 313

页数：5

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