Comparative studies of transparent conductive Ti-, Zr-, and Sn-doped In2O3 using a combinatorial approach

被引：44

作者：

Koida, T. ^{[1
]}

Kondo, M. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 06期

关键词：

D O I：

10.1063/1.2712161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on comparative studies of transparent conductive Ti-, Zr-, and Sn-doped In2O3 using a combinatorial approach. In2-2xMe2xO3 (Me:Ti, Zr, Sn) composition-spread epilayers (0 <= x <= 0.1) were fabricated on yttria-stabilized zirconia substrates using the combinatorial pulsed laser deposition technique, and structural, optical, and electrical properties for each composition were systematically investigated. In2-2xTi2xO3 (0.003 <= x < 0.01) and In2-2xZr2xO3 (0.003 <= x < 0.05) exhibited superior transparency in the near infrared wavelength region compared to In2-2xSn2xO3 without compromising the conductivity. The results are discussed in terms of scattering centers of electrons from temperature dependence of Hall mobility and the relationship between the values of the room temperature Hall mobility and carrier concentration. (c) 2007 American Institute of Physics.

引用

页数：6

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