Stability of (1(1)over-bar-00) m-plane GaN films grown by metalorganic chemical vapor deposition

被引：51

作者：

Imer, Bilge ^{[1
]}

Wu, Feng

Cravens, Michael D.

Speck, James S.

DenBaars, Steven P.

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, NICP, ERATO, JST Grp, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 11期

关键词：

nonpolar nitrides; (1100) m-plane GaN on m-plane SiC; (1120) a-plane GaN on a-plane SiC; metalorganic chemical vapor deposition (MOCVD); GaN heteroepitaxial growth; m-GaN; AlN nucleation layer; nonpolar GaN; GaN facet stability;

D O I：

10.1143/JJAP.45.8644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show the stability of planar nonpolar (1 (1) over bar 00) m-plane GaN thin films grown on m-plane 6H-SiC substrates using an AlN nucleation layer (NL) by metalorganic chemical vapor deposition (MOCVD). The stability of the m-plane GaN films was studied for a wide range of growth variables including reactor pressure, temperature, and group III and V flow rates. The surface morphology and crystal quality of the m-plane GaN films were less sensitive to changes in these growth variables than those of nonpolar (11 (2) over bar0) a-plane heteroepitaxial planar GaN films. The threading dislocation density of m-GaN on m-plane 6H-SiC was one order of magnitude lower than that of a-GaN on a-plane 6H-SiC.

引用

页码：8644 / 8647

页数：4

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