Reducing MOSFET 1/f noise and power consumption by switched biasing

被引:195
作者
Klumperink, EAM [1 ]
Gierkink, SLJ [1 ]
van der Wel, AP [1 ]
Nauta, B [1 ]
机构
[1] Univ Twente, MESA & Res Inst, IC Design Grp, NL-7500 AE Enschede, Netherlands
关键词
1/f noise; CMOS; flicker noise; MOSFET; noise reduction; oscillators; phase noise; timing jitter;
D O I
10.1109/4.848208
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Switched biasing is proposed as a technique for reducing the 1/f noise in MOSFET's, Conventional techniques, such as chopping or correlated double sampling, reduce the effect of 1/f noise in electronic circuits, whereas the switched biasing technique reduces the 1/f noise itself. Whereas noise reduction techniques generally lead to more power consumption, switched biasing can reduce the power consumption. It exploits an intriguing physical effect: Cycling a MOS transistor from strong inversion to accumulation reduces its intrinsic 1/f noise, As the 1/f noise is reduced at its physical roots, high frequency circuits, in which 1/f noise is being upconverted, can also benefit, This is demonstrated by applying switched biasing in a 0.8 mu m CMOS sawtooth oscillator, By periodically switching off the bias currents, during time intervals that they are not contributing to the circuit operation, a reduction of the 1/f noise induced phase noise by more than 8 dB is achieved, while the power consumption is also reduced by 30%.
引用
收藏
页码:994 / 1001
页数:8
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