Chemical Mechanical Polishing of Epitaxial Germanium on SiO2-patterned Si(001) Substrates

被引：17

作者：

Hydrick, J. M. ^{[1
]}

Park, J. S. ^{[1
]}

Bai, J. ^{[1
]}

Major, C. ^{[1
]}

Curtin, M. ^{[1
]}

Fiorenza, J. G. ^{[1
]}

Carroll, M. ^{[1
]}

Lochtefeld, A. ^{[1
]}

机构：

[1] AmberWave Syst Corp, Salem, NH 03079 USA

来源：

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期

关键词：

D O I：

10.1149/1.2986777

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Aspect Ratio Trapping is a promising technique for heterointegration of Ge onto Si substrates. By growing Ge in patterned SiO2 trenches, lattice-mismatch dislocations arising from the epitaxial interface can be effectively trapped. However, planarization of these samples is required to enable device fabrication. This paper describes the development and optimization of a chemical mechanical Polishing process for these structures. Polishing using diluted Nalco 2360 slurry was investigated, with the addition of NaOCl, NH4OH, or H2O2, for Ge removal rate increase. A slurry mix consisting of Nalco 2360, H2O2, and DI water was shown to have low dishing and low surface metals contamination, and planarized the Ge Aspect Ratio Trapping samples very effectively.

引用

页码：237 / 248

页数：12

共 11 条

[1] An efficient wet-cleaning of SiGe virtual substrates and of thick, pure Ge layers on Si(001) after a chemical mechanical planarization step [J].