Fabrication and characterisation of 200 mm germanium-on-insulator (GeOl) substrates made from bulk germanium

被引：56

作者：

Deguet, C.

Sanchez, L.

Akatsu, I.

Allibert, F.

Dechamp, J.

Madeira, F.

Mazen, F.

Tauzin, A.

Loup, V.

Richtarch, C.

Mercier, D.

Signamarcheix, T.

Letertre, F.

Depuydt, B.

Kernevez, N.

机构：

[1] CEA, GRE, LETI, DRT, F-38054 Grenoble 9, France

[2] SOITEC SA, Adv Technol Div, F-38190 Bernin, France

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 07期

关键词：

D O I：

10.1049/el:20060208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The formation and detailed characterisations of a 200 mm germanium-on-insulator substrate made from germanium bulk material as donor wafer using the Stuart Cut (TM) technology is reported. Detailed characterisations of final GeOl structures are presented: final roughness, defectivity evaluation, thickness measurement, and electrical characterisation.

引用

页码：415 / 417

页数：3

共 7 条

[1]

[Anonymous], 2005, Proc. 20th Eur. Photovoltaic Solar Energy Conf

[2] SILICON-ON-INSULATOR MATERIAL TECHNOLOGY [J].