Ordered GaAs quantum dot arrays on GaAs(001): Single photon emission and fine structure splitting

被引：70

作者：

Kiravittaya, S. ^{[1
]}

Benyoucef, M. ^{[1
]}

Zapf-Gottwick, R. ^{[1
]}

Rastelli, A. ^{[1
]}

Schmidt, O. G. ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 23期

关键词：

D O I：

10.1063/1.2399354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ordered GaAs/AlGaAs quantum dots (QDs) are fabricated on patterned GaAs(001) substrates and their optical properties are investigated by microphotoluminescence (PL) spectroscopy. QDs exhibit sharp excitonic lines with typical single QD emission features. Photon-correlation spectroscopy shows single photon emission for the neutral exciton transition. Polarization-dependent PL measurements reveal a sharp exciton line and a fine structure exchange splitting of about 70 mu eV. (c) 2006 American Institute of Physics.

引用

页数：3

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