Low-temperature synthesis of single-crystal germanium nanowires by chemical vapor deposition

被引:191
作者
Wang, DW [1 ]
Dai, HJ [1 ]
机构
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
关键词
D O I
10.1002/anie.200290047
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Live-wire potential: Low-temperature growth of Ge nanowires has been achieved by the chemical vapor deposition of GeH4 onto a SiO2 substrate coated with Au nanoparticles (see picture). This technique, which represents the mildest growth conditions for single-crystal nanowire synthesis, can also be used for patterned growth processes. Under such conditions, the growth of high-quality nanowires on a variety of substrates is possible, which may yield many possibilities in nanotechnological applications.
引用
收藏
页码:4783 / 4786
页数:4
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