Triazine-Based Graphitic Carbon Nitride: a Two-Dimensional Semiconductor

被引:587
作者
Algara-Siller, Gerardo [1 ]
Severin, Nikolai [2 ,3 ]
Chong, Samantha Y. [4 ,5 ]
Bjorkman, Torbjorn [6 ]
Palgrave, Robert G. [7 ]
Laybourn, Andrea [4 ,5 ]
Antonietti, Markus [8 ]
Khimyak, Yaroslav Z. [9 ]
Krasheninnikov, Arkady V. [10 ]
Rabe, Juergen P. [2 ,3 ]
Kaiser, Ute [1 ]
Cooper, Andrew I. [4 ,5 ]
Thomas, Arne [11 ]
Bojdys, Michael J. [4 ,5 ]
机构
[1] Univ Ulm, D-89081 Ulm, Germany
[2] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany
[3] Humboldt Univ, IRIS, D-12489 Berlin, Germany
[4] Univ Liverpool, Dept Chem, Liverpool L69 7ZD, Merseyside, England
[5] Univ Liverpool, Ctr Mat Discovery, Liverpool L69 7ZD, Merseyside, England
[6] Aalto Univ, Dept Appl Phys, COMP, Aalto 00076, Finland
[7] UCL, Dept Chem, London WC1H 0AJ, England
[8] Max Planck Inst Colloids & Interfaces, Dept Colloids, D-14476 Potsdam, Germany
[9] Univ E Anglia, Sch Pharm, Norwich NR4 7TJ, Norfolk, England
[10] Aalto Univ, Dept Appl Phys, Aalto 00076, Finland
[11] Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany
基金
英国工程与自然科学研究理事会; 欧洲研究理事会; 芬兰科学院;
关键词
carbon nitride; graphene; semiconductor; thin films; ELECTRONIC-STRUCTURE; GRAPHENE; CRYSTALLINE;
D O I
10.1002/anie.201402191
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.
引用
收藏
页码:7450 / 7455
页数:6
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