Huge binding energy of localized biexcitons in CdS/ZnS quantum structures

被引：38

作者：

Woggon, U

Hild, K

Gindele, F

Langbein, W

Hetterich, M

Grün, M

Klingshirn, C

机构：

[1] Univ Dortmund, Fachbereich Phys, D-44227 Dortmund, Germany

[2] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.61.12632

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Biexcitons localized in ultrathin CdS/ZnS single quantum wells with fluctuating well thicknesses are investigated by two-photon absorption and single-exciton spectroscopy. For the binding energy of the confined biexciton, a value of Delta E-B=38 meV is determined. Comparing Delta E-B with the CdS bulk exciton binding energy E-Ryd=28 meV, the largest known ratio Delta E-B/ERRyd=1.4 is found. Additionally, a strong enhancement of exchange splitting effects is observed resulting in a linearly polarized exciton doubler and a single, linearly polarized biexciton line.

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页码：12632 / 12635

页数：4

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