Carrier and light trapping in graded quantum-well laser structures

被引：4

作者：

Aichmayr, G

Martín, MD

van der Meulen, H

Pascual, C

Viña, L

Calleja, JM

Schafer, F

Reithmaier, JP

Forchel, A

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 24期

关键词：

D O I：

10.1063/1.126700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the carrier and light trapping in GaInAs/AlGaAs single-quantum-well laser structures by means of time-resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and of the cavity geometry was studied by using different AlGaAs/GaAs short-period superlattices as barriers. Our results show that grading the optical cavity improves considerably both carrier and light trapping in the quantum well, and that the trapping efficiency is enhanced by increasing the graded confining potential. (C) 2000 American Institute of Physics. [S0003-6951(00)01524-2].

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页码：3540 / 3542

页数：3

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