Spin-valve and tunnel-valve structures with in situ in-stack bias

被引：11

作者：

Childress, JR ^{[1
]}

Ho, MK ^{[1
]}

Fontana, RE ^{[1
]}

Carey, MJ ^{[1
]}

Rice, PM ^{[1
]}

Gurney, BA ^{[1
]}

Tsang, CH ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2002年 / 38卷 / 05期

关键词：

magnetic heads; magnetic recording; magnetoresistive devices; tunneling;

D O I：

10.1109/TMAG.2002.802802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of in-stack longitudinal magnetic stabilization for spin-valve and tunnel-valve recording head sensors has been investigated. An in-stack ferromagnetic layer pinned with an IrMn antiferromagnet is used to magnetostatically stabilize the free layer by flux closure. The use of IrMn with lower blocking temperature than PtMn allows the bias layer to be set independently from the PtMn-pinned reference layer in the spin-valve or tunnel-valve. A Ta spacer 10-30 Angstrom in thickness is used to separate the free layer from the bias layer resulting in low coupling fields. IrMn delivers up to 0.34 erg/cm(2) of pinning strength, resulting in stable unshielded sensor operation for device sizes below 0.2 mum.

引用

页码：2286 / 2288

页数：3

共 8 条

[1]

DILL FH, 2000, Patent No. 6023395

[2]

Fontana R. E. Jr, 1998, U.S. Patent, Patent No. [5,729,410, 5729410]

[3] Submicron trackwidth and stripe height MR sensor test structures [J].