Growth kinetics of ultra-thin N2O oxynitrides for gate insulator

Ultrathin oxynitride films with a thickness range between 4 and 6 nm were grown on Si (100) wafers in an N2O gas ambient using a conventional furnace. Growth temperature and time dependence of the N2O oxynitride thickness was investigated between 800 and 1050 degrees C. We found that the N2O gas flow rate dependence of the thickness was small below 900 degrees C and was abruptly increased above 900 degrees C. According to X-ray photoelectron spectroscopy (XPS) analysis, nitrogen concentration and the nitrogen bonding configurations was changed between temperatures below and above 900 degrees C. Two different growth kinetics below and above 900 degrees C were suggested.