Structural perfection of (001) CeO2 thin films on (1102) sapphire

被引：51

作者：

Zaitsev, AG ^{[1
]}

Ockenfuss, G ^{[1
]}

Guggi, D ^{[1
]}

Wordenweber, R ^{[1
]}

Kruger, U ^{[1
]}

机构：

[1] SIEMENS AG, D-13623 BERLIN, GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 07期

关键词：

D O I：

10.1063/1.364342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large-area (001) oriented epitaxial CeO2 films with extremely high crystalline perfection characterized by x-ray diffraction rocking curves of the (002) CeO2 reflection with a full width at half maximum (FWHM) Delta omega less than or equal to 0.013 degrees acid thickness dependent oscillations in the Bragg-Brentano x-ray diffraction spectra were deposited via rf-magnetron sputtering on (1102) sapphire, Pole figure measurements of the space symmetry confirmed that the examined sharp reflections belong to CeO2 and no other phases like CeAlO3 are present. The improvement of the crystalline quality was obtained by optimization of the high-pressure sputter deposition process and the use of large-area substrates. The [100] CeO2 axis was slightly tilted with respect to the [1102] sapphire axis by 0.185 degrees. Subsequently sputter-deposited high-T-c YBa2Cu3O7-x thin films revealed structural properties characterized by FWHM <0.06 degrees of the (005) theta-2 theta peaks and by FWHM of the (005) peaks rocking curves of Delta omega = 0.3 degrees. (C) 1997 American Institute of Physics.

引用

页码：3069 / 3072

页数：4

共 13 条

[1]

Guinier A., 1963, XRAY DIFFRACTION

[2] SUBSTRATES FOR HIGH-T-C SUPERCONDUCTOR MICROWAVE INTEGRATED-CIRCUITS [J].