CEO2 - AN ALTERNATIVE INSULATOR MATERIAL FOR SUPERCONDUCTING FIELD-EFFECT DEVICES

被引：50

作者：

WALKENHORST, A ^{[1
]}

SCHMITT, M ^{[1
]}

ADRIAN, H ^{[1
]}

PETERSEN, K ^{[1
]}

机构：

[1] DAIMLER BENZ FORSCHUNGSINST,D-60528 FRANKFURT,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 14期

关键词：

D O I：

10.1063/1.111783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The properties of high-T(c) superconducting field-effect devices using CeO2 as an insulating layer have been studied. The dielectric constant and hence the achieved charge transfer for constant gate voltage and equivalent geometry is smaller as compared to the established SrTiO3 dielectric. This is mostly compensated by better insulating properties. The observed field effects for a fixed amount of charge transfer are very similar to those obtained with the SrTiO3 dielectric, indicating that the observed field effects are truly due to changes in the charge carrier density and not due to field-induced stresses in the multilayer structure.

引用

页码：1871 / 1873

页数：3

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