High quality CeO2 film grown on Si(111) substrate by using low energy dual ion beam deposition technology

被引：41

作者：

Huang, DD ^{[1
]}

Qin, FG ^{[1
]}

Yao, ZY ^{[1
]}

Ren, ZZ ^{[1
]}

Lin, LY ^{[1
]}

Gao, WB ^{[1
]}

Ren, QY ^{[1
]}

机构：

[1] ACAD SINICA,INST SEMICOND,PHYS & CHEM ANAL LAB,BEIJING 100083,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期

关键词：

D O I：

10.1063/1.115362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using the mass-analyzed low energy dual ion beam deposition technique, a high quality epitaxial, insulating cerium dioxide thin film with a thickness of about 2000 Angstrom, has been grown on a silicon (111) substrate. The component species, cerium and oxygen, are homogeneous in depth, and have the correct stoichiometry for CeO2. X-ray double-crystal diffraction shows that the full width at half maximum of the (222) and (111) peaks of the film are less than 23 and 32 s, respectively, confirming that the film is a perfect single crystal. (C) 1995 American Institute of Physics.

引用

页码：3724 / 3725

页数：2

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