Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers

Characteristic temperature coefficients of the threshold current (T(0)) and the external differential quantum efficiency (T(1)) are studied as simple functions of the temperature dependence of the physical parameters of the semiconductor lasers. Simple expressions of characteristics temperature coefficients of the threshold current (T.) and the external differential quantum efficiency (T(1)) are expressed as functions as physical parameters and their temperature dependencies. The parameters studied here include the threshold (J(th)) and transparency (J(tr)) current density, the carrier injection efficiency (eta(inj)) and external (eta(d)) differential quantum efficiency, the internal loss (alpha(i)), and the material gain parameter (g(0)). The temperature analysis is performed on low-threshold current density (lambda = 1.17-1.19 mum) InGaAs-GaAsP-GaAs quantum-well lasers, although it is applicable to lasers with other active-layer materials. Analytical expressions for To and T, are shown to accurately predict the cavity length dependence of these parameters for the InGaAs active lasers.