New self-aligned planar resonant-tunneling diodes for monolithic circuits

Resonant-tunneling diodes (RTD's) with a new planar configuration have been fabricated with a new self-aligned process that is compatible with that of silicon integrated-circuits technology, The size of the RTD is determined by a shallow boron implant, and the individual RTD's are isolated by a deep proton implant, There is no deep mesa etch, Because of the self-alignment nature of the process, the peak current and voltage of the RTD's are highly uniform, The mean of the standard deviation of the peak current for 4-mu m(2) RTD's is 2.3% and the smallest RTD's fabricated are less than 1 mu m(2).