RESONANT-TUNNELING DIODES AS SOURCES FOR MILLIMETER AND SUBMILLIMETER WAVELENGTHS

被引：10

作者：

BOUREGBA, R

VANBESIEN, O

MOUNAIX, P

LIPPENS, D

PALMATEER, L

PERNOT, JC

BEAUDIN, G

ENCRENAZ, P

BOCKENHOFF, E

NAGLE, J

BOIS, P

CHEVOIR, F

VINTER, B

机构：

[1] ECOLE NORMALE SUPER,F-75231 PARIS,FRANCE

[2] OBSERV MEUDON,F-92195 MEUDON,FRANCE

[3] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1993年 / 41卷 / 11期

关键词：

D O I：

10.1109/22.273430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality Resonant Tunneling Diodes have been fabricated and tested as sources for millimeter and submillimeter wavelengths. The devices have shown excellent I-V characteristics with peak-to-valley current ratios as high as 6:1 and current densities in the range of 50-150 kA/cm2 at 300 K. Used as local oscillators, the diodes are capable of state of the art output power delivered by AlGaAs-based tunneling devices. As harmonic multipliers, a frequency of 320 GHz has been achieved by quintupling the fundamental oscillation of a klystron source.

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收藏

页码：2025 / 2027

页数：3

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