FABRICATION OF HIGH-PERFORMANCE ALXGA1-XAS/INYGA1-YAS/GAAS RESONANT TUNNELING DIODES USING A MICROWAVE-COMPATIBLE TECHNOLOGY

被引：7

作者：

LIPPENS, D ^{[1
]}

BARBIER, E ^{[1
]}

MOUNAIX, P ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 03期

关键词：

D O I：

10.1109/55.75738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new microwave-compatible process for fabricating planar integrated resonant tunneling diodes (RTD's) is described. Successful fabrications of high-performance RTD's using Al(x)Ga(1-x)As/In(y)Ga(1-y)As/GaAs strained layers have been obtained. Peak-to-valley current ratios (PVR's) of 4.8:1 with simultaneous peak current densities of 4 x 10(4) A/cm2 have been achieved at room temperature for diodes of area 9-mu-m2. Accurate measurements of reflection gain versus frequency between 1.5 and 26.5 GHz in the negative differential region indicate that the present technology is promising for millimeter-wave integrated circuits including self-oscillating mixers, frequency multipliers, and detectors.

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页码：114 / 116

页数：3

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