EFFECT OF CATHODE SPACER LAYER ON THE CURRENT-VOLTAGE CHARACTERISTICS OF RESONANT TUNNELING DIODES

被引：35

作者：

MOUNAIX, P

VANBESIEN, O

LIPPENS, D

机构：

[1] Centre Hyperfréquences et Semiconducteurs, U. A. 287 CNRS-Bât. P4, Université des Sciences et Techniques de Lille Flandres Artois, 59655 Villeneuve d'Ascq, Cedex

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 15期

关键词：

D O I：

10.1063/1.103381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of a lightly doped cathode spacer layer on resonant tunneling of Al0.3Ga0.7As-GaAs double-barrier heterostructures is examined. A self-consistent band-bending calculation combined with a quantum calculation of current-voltage characteristics is used to model the experimentally observed I-V curves. It is found that the I-V characteristics show additional structures, sensitively dependent upon temperature. These effects result from the formation of a wide barrier by space-charge reaction in the spacer layer leading to two possible resonant states. The validity of the theoretical approach is supported by the good agreement with experimental results.

引用

页码：1517 / 1519

页数：3

共 10 条

[1] EFFECT OF SI DOPING IN ALAS BARRIER LAYERS OF ALAS-GAAS-ALAS DOUBLE-BARRIER RESONANT TUNNELING DIODES [J].

CHENG, P ;

HARRIS, JS .

APPLIED PHYSICS LETTERS, 1989, 55 (06) :572-574

[2] EFFECT OF INELASTIC PROCESSES ON THE SELF-CONSISTENT POTENTIAL IN THE RESONANT-TUNNELING DIODE [J].

FRENSLEY, WR .

SOLID-STATE ELECTRONICS, 1989, 32 (12) :1235-1239

[3] SELF-CONSISTENT STUDY OF THE RESONANT-TUNNELING DIODE [J].

KLUKSDAHL, NC ;

KRIMAN, AM ;

FERRY, DK ;

RINGHOFER, C .

PHYSICAL REVIEW B, 1989, 39 (11) :7720-7735

[4] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELING DIODE MODELING [J].

MAINS, RK ;

SUN, JP ;

HADDAD, GI .

APPLIED PHYSICS LETTERS, 1989, 55 (04) :371-373

[5]

POL LD, 1990, ELECTRON LETT, V26, P342

[6] QUANTITATIVE RESONANT TUNNELING SPECTROSCOPY - CURRENT-VOLTAGE CHARACTERISTICS OF PRECISELY CHARACTERIZED RESONANT TUNNELING DIODES [J].

REED, MA ;

FRENSLEY, WR ;

DUNCAN, WM ;

MATYI, RJ ;

SEABAUGH, AC ;

TSAI, HL .

APPLIED PHYSICS LETTERS, 1989, 54 (13) :1256-1258

[7] MAGNETO-TUNNELING STUDIES OF CHARGE BUILDUP IN DOUBLE BARRIER DIODES [J].

THOMAS, D ;

CHEVOIR, F ;

BOIS, P ;

BARBIER, E ;

GULDNER, Y ;

VIEREN, JP .

SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (02) :219-222

[8] TUNNELING IN A FINITE SUPERLATTICE [J].

TSU, R ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564

[9] DC AND AC ANALYSIS OF HIGH-CURRENT DOUBLE BARRIER STRUCTURES [J].

VANBESIEN, O ;

LIPPENS, D .

SOLID-STATE ELECTRONICS, 1989, 32 (12) :1533-1537

[10] INFLUENCE OF SPACER LAYER THICKNESS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF ALGAAS GAAS AND ALGAAS INGAAS RESONANT TUNNELING DIODES [J].

YOO, HM ;

GOODNICK, SM ;

ARTHUR, JR .

APPLIED PHYSICS LETTERS, 1990, 56 (01) :84-86

← 1 →