EFFECT OF INELASTIC PROCESSES ON THE SELF-CONSISTENT POTENTIAL IN THE RESONANT-TUNNELING DIODE

被引：32

作者：

FRENSLEY, WR

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(89)90220-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1235 / 1239

页数：5

共 9 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[2] WIGNER-FUNCTION MODEL OF A RESONANT-TUNNELING SEMICONDUCTOR-DEVICE
FRENSLEY, WR
[J]. PHYSICAL REVIEW B, 1987, 36 (03): : 1570 - 1580
[3] QUANTUM TRANSPORT MODELING OF RESONANT-TUNNELING DEVICES
FRENSLEY, WR
[J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 739 - 742
[4] FRENSLEY WR, 1989, UNPUB BOUNDARY CONDI
[5] SELF-CONSISTENT STUDY OF THE RESONANT-TUNNELING DIODE
KLUKSDAHL, NC
KRIMAN, AM
FERRY, DK
RINGHOFER, C
[J]. PHYSICAL REVIEW B, 1989, 39 (11) : 7720 - 7735
[6] MAINS RK, 1988, UNPUB NUMERICAL CONS
[7] POTZ W, 1989, SUPERLATTICE MICROST, V6, P189
[8] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ
SOLLNER, TCLG
GOODHUE, WD
TANNENWALD, PE
PARKER, CD
PECK, DD
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 588 - 590
[9] WINGREEN S, 1987, B AM PHYS SOC, V32, P833