DC AND AC ANALYSIS OF HIGH-CURRENT DOUBLE BARRIER STRUCTURES

被引：21

作者：

VANBESIEN, O

LIPPENS, D

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90269-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1533 / 1537

页数：5

共 12 条

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[6] THE EFFECT OF LEVEL BROADENING ON THE TUNNELING OF ELECTRONS THROUGH SEMICONDUCTOR DOUBLE-BARRIER QUANTUM-WELL STRUCTURES [J].

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[8] EFFECT OF INELASTIC-SCATTERING ON RESONANT AND SEQUENTIAL TUNNELING IN DOUBLE BARRIER HETEROSTRUCTURES [J].

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[10] RESONANT TUNNELING AND HOT-ELECTRON EFFECTS IN DOUBLE BARRIER - A REVIEW [J].

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