RESONANT TUNNELING AND HOT-ELECTRON EFFECTS IN DOUBLE BARRIER - A REVIEW

被引:7
作者
LIPPENS, D
DESAINTPOL, L
BOUREGBA, R
MOUNAIX, P
VINCHON, T
机构
来源
REVUE DE PHYSIQUE APPLIQUEE | 1989年 / 24卷 / 01期
关键词
D O I
10.1051/rphysap:0198900240101700
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:17 / 30
页数:14
相关论文
共 49 条
[1]  
BADHER TB, 1987, APPL PHYS LETT, V51, P1089
[2]   SELF-CONSISTENT ANALYSIS OF RESONANT TUNNELING IN A 2-BARRIER-ONE-WELL MICROSTRUCTURE [J].
BRENNAN, KF .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2392-2400
[3]   TUNNELING OF ELECTRONS IN QUANTUM-WELLS WITH INDIRECT GAP SEMICONDUCTOR BARRIERS [J].
BREY, L ;
TEJEDOR, C .
SOLID STATE COMMUNICATIONS, 1987, 61 (09) :573-576
[4]   FUNDAMENTAL OSCILLATIONS UP TO 200 GHZ IN A RESONANT-TUNNELING DIODE [J].
BROWN, ER ;
SOLLNER, TCLG ;
GOODHUE, WD ;
PARKER, CD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2381-2381
[5]   MILLIMETER-BAND OSCILLATIONS BASED ON RESONANT TUNNELING IN A DOUBLE-BARRIER DIODE AT ROOM-TEMPERATURE [J].
BROWN, ER ;
SOLLNER, TCLG ;
GOODHUE, WD ;
PARKER, CD .
APPLIED PHYSICS LETTERS, 1987, 50 (02) :83-85
[6]   IMPORTANCE OF SPACE-CHARGE EFFECTS IN RESONANT TUNNELING DEVICES [J].
CAHAY, M ;
MCLENNAN, M ;
DATTA, S ;
LUNDSTROM, MS .
APPLIED PHYSICS LETTERS, 1987, 50 (10) :612-614
[7]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[8]   HETEROJUNCTION CATHODE CONTACT TRANSFERRED-ELECTRON OSCILLATORS [J].
FRISCOURT, MR ;
ROLLAND, PA ;
PERNISEK, M .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :497-499
[9]  
FROMHOLD AT, 1981, QUANTUM MECHANICS AP
[10]  
FUTATSUGI, 1987, JPN J APPL PHYS, V26, P2131