INFLUENCE OF SPACER LAYER THICKNESS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF ALGAAS GAAS AND ALGAAS INGAAS RESONANT TUNNELING DIODES

被引：27

作者：

YOO, HM

GOODNICK, SM

ARTHUR, JR

机构：

[1] Center for Advanced Materials Research, Department of Electrical and Computer Engineering, Oregon State University, Corvallis

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 01期

关键词：

D O I：

10.1063/1.102660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the dependence of the current-voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes (RTDs) on spacer layer thickness. The measured peak to valley current ratio of the RTDs studied here is shown to improve while the current density through the RTDs decreases with increasing spacer layer thickness below a critical value. We find significant differences in the effect of the spacer layer thickness between AlGaAs/InGaAs and AlGaAs/GaAs RTDs, which we believe to be related to the relative quasi-bound state energies of the two systems.

引用

页码：84 / 86

页数：3

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